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Narrow-gap Semiconductor Photodiodes

Antoni Rogalski, Krzysztof Adamiec, and Jaroslaw Rutkowski

In this monograph, investigations of the performance of narrow-gap semiconductor photodiodes are presented, and recent progress in different IR photodiode technologies is HgCdTe photodiodes, InSb photodiodes, alternatives to HgCdTe III-V and II-VI ternary alloy photodiodes, lead chalcogenide photodiodes, and a new class of photodiodes based on two dimensional solids. Investigations of the performance of photodiodes operated in different spectral regions are presented. Contents - Preface

- Introduction

- Narrow-Gap Semiconductor Materials

- Generation-Recombination Carrier Lifetime

- Operating Principles of Photodiodes

- Focal Plane Arrays

- III-V Photodiodes

- HgCdTe Photodiodes

- HgZnTe and HgMnTe Photodiodes

- Lead Salts Photodiodes

- Superlattice Photodiodes

- Final Remarks

- Index

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